Accelerating interest in silicon nitride thin film material system continues in both academic and industrial communities due to its highly desirable physical, chemical, and electrical properties and the potential to enable new device technologies. As considered here, the silicon nitride material system encompasses both non-hydrogenated (SiNx) and hydrogenated (SiNx:H) silicon nitride, as well as silicon nitride-rich films, defined as SiNx with C inclusion, in both non-hydrogenated (SiNx(C)) and hydrogenated (SiNx:H(C)) forms. Due to the extremely high level of interest in these materials, this article is intended as a follow-up to the authors' earlier publication [A. E. Kaloyeros, F. A. Jové, J. Goff, B. Arkles, Silicon nitride and silicon nitride-rich thin film technologies: trends in deposition techniques and related applications, ECS J. Solid State Sci. Technol., 6, 691 (2017)] that summarized silicon nitride research and development (R&D) trends through the end of 2016. In this survey, emphasis is placed on cutting-edge achievements and innovations from 2017 through 2019 in Si and N source chemistries, vapor phase growth processes, film properties, and emerging applications, particularly in heterodevice areas including sensors, biointerfaces and photonics.
The Electrochemical Society (ECS) was founded in 1902 to advance the theory and practice at the forefront of electrochemical and solid state science and technology, and allied subjects.
ISSN: 2162-8777
JSS is a peer-reviewed journal covering fundamental and applied areas of solid-state science and technology, including experimental and theoretical aspects of the chemistry, and physics of materials and devices.
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Alain E. Kaloyeros et al 2020 ECS J. Solid State Sci. Technol. 9 063006
Roy Knechtel et al 2021 ECS J. Solid State Sci. Technol. 10 074008
Wafer bonding is an important process step in microsystem technologies for processing engineered substrates and for capping. Usually, the work and literature are focused on the bonding of the main wafer area. However, in recent years MEMS technologies have become more complex, with more process steps after wafer bonding. Accordingly, the wafer edge is becoming more and more important, and must be engineered. Methods for realizing this are discussed in this paper.
Sandeep Arya et al 2021 ECS J. Solid State Sci. Technol. 10 023002
ZnO has several potential applications into its credit. This review article focuses on the influence of processing parameters involved during the synthesis of ZnO nanoparticles by sol-gel method. During the sol-gel synthesis technique, the processing parameters/experimental conditions can affect the properties of the synthesized material. Processing parameters are the operating conditions that are to be kept under consideration during the synthesis process of nanoparticles so that various properties exhibited by the resulting nanoparticles can be tailored according to the desired applications. Effect of parameters like pH of the sol, additives used (like capping agent, surfactant), the effect of annealing temperature and calcination on the morphology and the optical properties of ZnO nanoparticles prepared via sol-gel technique is analyzed in this study. In this study, we tried to brief the experimental investigations done by various researchers to analyze the influence of processing parameters on ZnO nanoparticles. This study will provide a platform to understand and establish a correlation between the experimental conditions and properties of ZnO nanoparticles prepared through sol-gel route which will be helpful in meeting the desired needs in various application areas.
Chunlin Zhou et al 2021 ECS J. Solid State Sci. Technol. 10 027005
In recent years, betavoltaic batteries have become an ideal power source for micro electromechanical systems. Betavoltaic battery is a device that converts the decay energy of beta emitting radioisotope sources into electrical energy using transducers. They have the advantages of high energy density, long service life, strong anti-interference ability, small size, light weight, easy miniaturization and integration, thus it has become a research hotspot in the field of micro energy. However, to date, the low energy conversion efficiencies as well as technological limitations of betavoltaic batteries impede their further application. In this review, the theory of betavoltaic energy conversion and recent understanding of the ideal material and structure design of the betavoltaic batteries for efficient exciton production, dissociation and charge transport is described, as well as recent attempts to realize optimum results. This review article concludes by identifying the remaining challenges for the improvement of battery performance and by providing perspectives toward real application of betavoltaic batteries.
Woon Jin Chung and Yoon Hee Nam 2020 ECS J. Solid State Sci. Technol. 9 016010
Phosphor-in-glass (PiG) is a mixture of a transparent glass and ceramic phosphors and has been recently commercialized for its various advantages as an inorganic color converter for white light emitting diodes (wLEDs). Since the successful demonstration of the wLED and its improved stability over the conventional phosphors in silicon or organic resins, extensive studies have been reported to improve its color conversion and resultant LED properties, such as luminescence efficacy, chromaticity, correlated color temperature and color gamut, as well as its long term stability. Various attempts have also been made to fabricate a PiG structure and to extend its applications. This study reviews the recent progress of PiG and discusses various approaches that have been proposed to overcome the technical issues related to PiG.
Alain E. Kaloyeros and Barry Arkles 2023 ECS J. Solid State Sci. Technol. 12 103001
In Part I of a two-part report, we provide a detailed and systematic review of the latest progress in cutting-edge innovations for the silicon carbide (SiC) material system, focusing on chemical vapor deposition (CVD) thin film technologies. To this end, up-to-date results from both incremental developments in traditional SiC applications as well major advances in novel SiC usages are summarized. Emphasis is placed on new chemical sources for Si and C, particularly in the form of single source SiC precursors as well as emerging molecular and atomic scale deposition techniques, with special attention to their effects on resulting film properties and performance. The review also covers relevant research and development efforts as well as their potential impact on and role in the introduction of new technological applications. Part II will focus on findings for physical vapor deposition (PVD) as well as other deposition techniques.
J. Müller et al 2015 ECS J. Solid State Sci. Technol. 4 N30
Bound to complex perovskite systems, ferroelectric random access memory (FRAM) suffers from limited CMOS-compatibility and faces severe scaling issues in today's and future technology nodes. Nevertheless, compared to its current-driven non-volatile memory contenders, the field-driven FRAM excels in terms of low voltage operation and power consumption and therewith has managed to claim embedded as well as stand-alone niche markets. However, in order to overcome this restricted field of application, a material innovation is needed. With the ability to engineer ferroelectricity in HfO2, a high-k dielectric well established in memory and logic devices, a new material choice for improved manufacturability and scalability of future 1T and 1T-1C ferroelectric memories has emerged. This paper reviews the recent progress in this emerging field and critically assesses its current and future potential. Suitable memory concepts as well as new applications will be proposed accordingly. Moreover, an empirical description of the ferroelectric stabilization in HfO2 will be given, from which additional dopants as well as alternative stabilization mechanism for this phenomenon can be derived.
Yu-Cheng Syu et al 2018 ECS J. Solid State Sci. Technol. 7 Q3196
Biosensor research has been addressed as an interested field recently. Within different kinds of developed biosensing technologies, field-effect transistor (FET) based biosensors stand out due to their attractive features, such as ultra-sensitivity detection, mass-production capability, and low-cost manufacturing. To promote understandings of the FET based biosensing technology, in this review, its sensing mechanism is introduced, as well as major FET-based biosensing devices: ion sensitive field-effect transistor (ISFET), silicon nanowire, organic FET, graphene FET, and compound-semiconductor FET. In addition to FET-based biosensing devices, clinical applications, such as cardiovascular diseases (CVDs), cancers, diabetes, HIV, and DNA sequence, are also reviewed. In the end, several critical challenges of FET-based biosensing technology are discussed to envision next steps in healthcare technologies.
Alain E. Kaloyeros and Barry Arkles 2024 ECS J. Solid State Sci. Technol. 13 043001
Silicon carbide (SiCx) thin films deposition processes fall primarily into three main categories: (1) chemical vapor deposition (CVD) and its variants, including plasma enhanced CVD (PE-CVD); (2) physical vapor deposition (PVD), including various forms of sputtering; (3) alternative (non-CVD and non-PVD) methodologies. Part I of this two-part report ECS J. Solid State Sci. Technol., 12, 103001 (2023) examined recent peer-reviewed publications available in the public domain pertaining to the various CVD processes for SiCx thin films and nanostructures, as well as CVD modeling and mechanistic studies. In Part II, we continue our detailed, systematic review of the latest progress in cutting-edge SiCx thin film innovations, focusing on PVD and other non-PVD and non-CVD SiCx coating technologies. Particular attention is given to pertinent experimental details from PVD and alternative (non-CVD and non-PVD) processing methodologies as well as their influence on resulting film properties and performance.
Sean W. King 2015 ECS J. Solid State Sci. Technol. 4 N3029
Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.
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Yogesh Thakur et al 2024 ECS J. Solid State Sci. Technol. 13 047005
Electrical properties of an organic field-effect transistor were modelled in top gate top contact (TGTC) geometry and H2 gas sensors were designed for increased sensitivity based on the structure. Safety concerns related to hydrogen usage must be addressed; these hazardous characteristics include a wide flammable range (4%–75%) that results in a rapid burning velocity, a low minimum ignition energy (0.017 mJ), a high heat of combustion (143 kJ g−1), and the high diffusivity of hydrogen gas (0.61 cm2 s−1 in the air). These characteristics make it impossible to control hydrogen combustion after a specific time. All simulations were performed in the Silvaco TCAD ATLAS tool. We analysed the driving principle of gas sensors and introduced gas sensing properties in OFET using platinum metal at the gate electrode for H2 gas detection. IOFF, ION, and VTH are sensitivity parameters that alter when the metalwork function of the gate changes with respect to the gas present on it. The designed sensor was analysed for different dielectric materials. Results demonstrate that the increase in sensitivity for OFET-based H2 sensors is 73.4%, 80.7%, 90.5%, and 95.6% when the work function changes by 50, 100, 150, and 200 meV for Pt gate electrodes with an increase in dielectric value of insulating layer from SiO2 (3.9) to La2O3 (27). Results were compared with the In1-xGaxAs CGNWFET-based H2 sensor as the work function varies at 200 meV,the sensitivity enhancement with OFET-based H2 sensors is 8.09%.
Jagram Anterbedy et al 2024 ECS J. Solid State Sci. Technol. 13 043012
An Li2O-incorporated bioactive glass system of chemical composition xLi2O-10BaO-10ZnO-(80-x)B2O3 with x = 0–20 mol% was synthesized by melt-quench route. Non-crystalline behaviour was confirmed with X-ray diffraction spectra. The antibacterial zone of inhibitions increased with Li2O incorporation. Experimental densities increased with Li2O molar content and molar volume decreased. UV-Optical absorption spectra confirmed a cut-off wave length (λc) increasing trend by NBOs. Indirect band gap decreased, direct band gap decreased, and Urbach energy increased with Li2O addition. The refractive index of the glass system also increased. Fourier transform infrared and Raman spectroscopy studies confirmed the structural variations and existence of metal-oxides in the glass matrix. The AC conductivity increased with frequency, temperature, and also Li2O content by almost three orders of magnitude. The findings of higher order conductivity (10−3Ω−1cm−1), improvement in the zone of inhibitions upto 15 mm against E. coli., and 14 mm against Salmonella; higher value of refractive index (n > 2) confirms the multiple applications of these glasses.
Himanandini Gunti et al 2024 ECS J. Solid State Sci. Technol. 13 043015
We have developed multiferroic Bismuth ferrite (BiFeO3, BFO) incorporated Poly (vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) polymer-ceramic composites through the solution casting method. The polymer-ceramic composites are fabricated by varying the composition of the BFO as a filler material ranging 5, 10, 15, 20, 25, 30, and 40 wt% into the PVDF-HFP polymer matrix. We have investigated the effect of BFO loading on the structural, morphological, spectroscopic, and dielectric properties by different characterization techniques. X-ray diffraction analysis indicates the presence of non-polar α- and polar β- phases of PVDF-HFP in the composites. Scanning electron microscope studies revealed the spherulite morphology and homogenous dispersion of BFO particles. The addition of BFO filler in PVDF-HFP matrix at various percentages has been studied to improve the polar β- phase of PVDF-HFP which may enhance ferroelectric properties. The dielectric studies at room temperature showed an increase in dielectric constant value from 9.5 (pure PVDF-HFP) to 21.08 (30% loaded BFO) at 100 Hz. It is also evident from the Fourier Transform- Infrared (FT-IR) spectra, that a maximum of 75.24% of β-fraction is observed for 30% loaded BFO composition. The enhanced properties of the fabricated materials suggest that they may be useful for polymer-ceramic capacitor applications. The results are discussed in detail.
Sezgin Yasa et al 2024 ECS J. Solid State Sci. Technol. 13 041007
Recycling of LiCoO2 (LCO) based Li-ion batteries for energy storage systems is crucial both environmentally and economically. Reusing active species of LCO cathodes minimizes waste and conserves resources, promoting sustainability in energy storage. We have investigated repurposing cobalt from spent LiCoO2 (LCO) type Li-ion batteries into a cobalt sulfide-based compound (CS), which was then employed as an electrode material in asymmetric supercapacitors. Initially, the LCO cathode compound underwent leaching, resulting in the precipitation of CS utilizing the sulfur source derived from cobalt ions present in the solution. Furthermore, chlorine-doped graphene oxide (Cl-GO) was synthesized via the chronoamperometric method utilizing a 5 M perchloric acid solution. Produced CS and Cl-GO were characterized by using spectroscopic and microscopic techniques. The resulting CS and Cl-GO powders were combined to form the composite positive electrode of coin cell type asymmetric supercapacitors (CCTAS), with graphite powder (GP) utilized in the preparation of the negative electrode. CCTAS were also characterized by using electrochemical techniques such as cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge-discharge. The highest areal capacitance, recorded as 101 mF.cm−2 at a scan rate of 10 mV.s−1, was achieved in the CS/Cl-GO%15//GP CCTAS, with a capacitance retention of approximately 94% observed after 1000 cycles.
Abhay Pratap Singh et al 2024 ECS J. Solid State Sci. Technol. 13 043011
The analog/radio-frequency (RF) performance of a ferroelectric-based substrate metal oxide semiconductor field effect transistor (FE-MOSFET) with dielectric spacer was designed and proposed. The utilization of gate side wall spacers aims to mitigate short-channel effects (SCEs), and improve overall device performance. Simulation results demonstrate enhanced performance metrics, including improved transconductance (80%), reduced gate leakage (95.4%), and enhanced cutoff frequency (25%), making this design a promising candidate for next-generation high-performance analog and RF applications. Additionally, a novel machine learning (ML)-assisted approach is proposed for investigating the spacer-based FE-MOSFET to reduce the computational cost of numerical TCAD device simulations with the help of conventional- artificial neural network (C-ANN). This method is reported for the first-time ML-based C-ANN for Fe-based low-power MOSFET, matches the similar accuracy of physics-based TCAD with the fastest learning rate and fastest computational speed (in 95–100 s). An ML-based prediction replacement for physics-based TCAD is developed to save around 8–10 h of runtime for each iteration. Because ML predictions can never be 100% accurate, it is essential to ensure approximately zero mean-square error in the final results.
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Himanshu Prasad Mamgain et al 2024 ECS J. Solid State Sci. Technol. 13 043010
Corrosion is an undesirable electrochemical reaction that leads to material degradation and affects material properties like ductility, malleability, conductivity, etc. The consequences of corrosion are machine failure, bridge failures, buildings collapse, and significant economic losses to GDP (4-5%). Furthermore, corrosion can pose serious safety risks that result in casualties which makes minimizing the effect of corrosion a great challenge. Traditional solutions like inhibitors, design modification, and paints are available to prevent corrosion but have many limitations, such as cost, durability, stability issues, and general inefficiency. In this context, a nanostructured superhydrophobic coating (SH) is gaining attention for its corrosion prevention efficiency and other broad industrial applications. The nano air pockets present in SH coating exhibit a high contact angle due to their unique combination of high surface roughness, distinctive nanostructure, and reduced surface energy. This reduces the surface area of between the corrosive substance,water droplet and the metal surface, leading to improved efficiency in resisting corrosion. In this paper, the recent advancement in electrodeposition to develop corrosion-resistant SH coatings on copper substrate and compression with other metals with their physical, chemical, and thermal stabilities are discussed. In many papers, scientists observed different types of surface morphology, texture, and surface energy, which give different tendencies to prevent surfaces from corrosion are also disscused . The constraints in fabrication and the prospects of the coating are also highlighted.
Highlights
An overview of the applications of copper and the problem of corrosion, factors affecting corrosion, and its impact in different industries.
A broad overview of rudiments of the superhydrophobicity
Detailed analysis of fabrication of SHCs for metal protection from corrosion by electrodeposition on copper and comparisons with other metals.
Other industrial applications of corrosion-resistant superhydrophobic coating are included.
Stability, conclusion, and future perspectives in fabricating superhydrophobic coating to minimize corrosion.
Bakr Ahmed Taha et al 2024 ECS J. Solid State Sci. Technol. 13 047004
Early diagnosis through noninvasive tools is a cornerstone in the realm of personalized and medical healthcare, averting direct/indirect infection transmission and directly influencing treatment outcomes and patient survival rates. In this context, optical biochip breathomic sensors integrated with nanomaterials, microfluidics, and artificial intelligence exhibit the potential to design next-generation intelligent diagnostics. This cutting-edge tool offers a variety of advantages, including being economical, compact, smart, point of care, highly sensitive, and noninvasive. This makes it an ideal avenue for screening, diagnosing, and prognosing various high-risk diseases/disorders by detecting the associated breath biomarkers. The underlying detection mechanism relies on the interaction of breath biomarkers with sensors, which causes modulations in fundamental optical attributes, such as surface plasmon resonance, fluorescence, reflectance, absorption, emission, phosphorescence, and refractive index. Despite these remarkable attributes, the commercial development of optical biochip breathomic sensors faces challenges, such as insufficient support from clinical trials, concerns about cross-sensitivity, challenges related to production scalability, validation issues, regulatory compliance, and contrasts with conventional diagnostics. This perspective article sheds light on the cutting-edge state of optical breathomic biochip sensors for disease diagnosis, addresses associated challenges, proposes alternative solutions, and explores future avenues to revolutionize personalized and medical healthcare diagnostics.
Madhu Bala and Sushil Bansal 2024 ECS J. Solid State Sci. Technol. 13 047003
Plant leaf disease identification is a crucial aspect of modern agriculture to enable early disease detection and prevention. Deep learning approaches have demonstrated amazing results in automating this procedure. This paper presents a comparative analysis of various deep learning methods for plant leaf disease identification, with a focus on convolutional neural networks. The performance of these techniques in terms of accuracy, precision, recall, and F1-score, using diverse datasets containing images of diseased leaves from various plant species was examined. This study highlights the strengths and weaknesses of different deep learning approaches, shedding light on their suitability for different plant disease identification scenarios. Additionally, the impact of transfer learning, data augmentation, and sensor data integration in enhancing disease detection accuracy is discussed. The objective of this analysis is to provide valuable insights for researchers and practitioners seeking to harness the potential of deep learning in the agricultural sector, ultimately contributing to more effective and sustainable crop management practices.
Avinash Sharma et al 2024 ECS J. Solid State Sci. Technol. 13 047002
Multidrug resistance (MDR) is a significant global challenge requiring strategic solutions to address bacterial infections. Recent advancements in nanotechnology, particularly in the synthesis of zinc oxide nanoparticles (ZnO NPs) using natural agents as stabilizers and reducing agents, have shown promising results in combating MDR. These nanoparticles possess strong antimicrobial properties against different strains of Gram-positive and Gram-negative, making them suitable for various industries, including food, pharmaceuticals, coatings, and medical devices. ZnO-NPs work by generating reactive oxygen species, releasing zinc ions (Zn2+), disrupting the bacterial cell membrane, interfering with metabolic processes and genetic material, and inducing oxidative stress and apoptosis. However, more research is needed to refine synthesis techniques, control size and morphology, and increase antibacterial efficacy. To fully understand their potential, interactions with proteins, DNA, and bacterial cell walls must also be examined. Investigating the synergistic potential of biogenic ZnO NPs with conventional antibacterial treatments could enhance therapeutic effectiveness while minimizing the risk of resistance emergence. Here we provide insight into the advancements in biogenic synthesis of nanoparticles using bio extracts and their applications in antimicrobial resistance as well as various factors affecting the synthesis process and characterization techniques for ZnO NPs. Recent studies on the antimicrobial activity of biogenic ZnO NPs against different pathogens and their mechanisms of action are discussed. Furthermore, potential applications of biogenic ZnO NPs as antimicrobial agents are highlighted.
Alain E. Kaloyeros and Barry Arkles 2024 ECS J. Solid State Sci. Technol. 13 043001
Silicon carbide (SiCx) thin films deposition processes fall primarily into three main categories: (1) chemical vapor deposition (CVD) and its variants, including plasma enhanced CVD (PE-CVD); (2) physical vapor deposition (PVD), including various forms of sputtering; (3) alternative (non-CVD and non-PVD) methodologies. Part I of this two-part report ECS J. Solid State Sci. Technol., 12, 103001 (2023) examined recent peer-reviewed publications available in the public domain pertaining to the various CVD processes for SiCx thin films and nanostructures, as well as CVD modeling and mechanistic studies. In Part II, we continue our detailed, systematic review of the latest progress in cutting-edge SiCx thin film innovations, focusing on PVD and other non-PVD and non-CVD SiCx coating technologies. Particular attention is given to pertinent experimental details from PVD and alternative (non-CVD and non-PVD) processing methodologies as well as their influence on resulting film properties and performance.
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Bakr Ahmed Taha et al 2024 ECS J. Solid State Sci. Technol. 13 047004
Early diagnosis through noninvasive tools is a cornerstone in the realm of personalized and medical healthcare, averting direct/indirect infection transmission and directly influencing treatment outcomes and patient survival rates. In this context, optical biochip breathomic sensors integrated with nanomaterials, microfluidics, and artificial intelligence exhibit the potential to design next-generation intelligent diagnostics. This cutting-edge tool offers a variety of advantages, including being economical, compact, smart, point of care, highly sensitive, and noninvasive. This makes it an ideal avenue for screening, diagnosing, and prognosing various high-risk diseases/disorders by detecting the associated breath biomarkers. The underlying detection mechanism relies on the interaction of breath biomarkers with sensors, which causes modulations in fundamental optical attributes, such as surface plasmon resonance, fluorescence, reflectance, absorption, emission, phosphorescence, and refractive index. Despite these remarkable attributes, the commercial development of optical biochip breathomic sensors faces challenges, such as insufficient support from clinical trials, concerns about cross-sensitivity, challenges related to production scalability, validation issues, regulatory compliance, and contrasts with conventional diagnostics. This perspective article sheds light on the cutting-edge state of optical breathomic biochip sensors for disease diagnosis, addresses associated challenges, proposes alternative solutions, and explores future avenues to revolutionize personalized and medical healthcare diagnostics.
Sangeeta Palekar et al 2024 ECS J. Solid State Sci. Technol. 13 027004
The pursuit of rapid diagnosis has resulted in considerable advances in blood parameter sensing technologies. As advances in technology, there may be challenges in equitable access for all individuals due to economic constraints, advanced expertise, limited accessibility in particular places, or insufficient infrastructure. Hence, simple, cost efficient, benchtop biochemical blood-sensing platform was developed for detecting crucial blood parameters for multiple disease diagnosis. Colorimetric and image processing techniques is used to evaluate color intensity. CMOS image sensor is utilized to capture images to calculate optical density for sensing. The platform is assessed with blood serum samples, including Albumin, Gamma Glutamyl Transferase, Alpha Amylase, Alkaline Phosphatase, Bilirubin, and Total Protein within clinically relevant limits. The platform had excellent Limits of Detection (LOD) for these parameters, which are critical for diagnosing liver and kidney-related diseases (0.27 g dl−1, 0.86 IU l−1, 1.24 IU l−1, 0.97 IU l−1, 0.24 mg dl−1, 0.35 g dl−1, respectively). Machine learning (ML) algorithms were used to estimate targeted blood parameter concentrations from optical density readings, with 98.48% accuracy and reduced incubation time by nearly 80%. The proposed platform is compared to commercial analyzers, which demonstrate excellent accuracy and reproducibility with remarkable precision (0.03 to 0.71%CV). The platform's robust stability of 99.84% was shown via stability analysis, indicating its practical applicability.
V. I. Nikolaev et al 2023 ECS J. Solid State Sci. Technol. 12 115001
The properties of orthorhombic κ-Ga2O3 films grown by Epitaxial Lateral Overgrowth (ELOG) were studied by Scanning Transmission Electron Microscopy (STEM), X-ray diffraction, capacitance-voltage profiling, Microcathodoluminescence (MCL) spectroscopy and imaging. ELOG mask was formed by deposition of SiO2 stripes on TiO2 buffer prepared on basal plane sapphire, with the stripes going along the [110] direction of sapphire. κ-Ga2O3 ELOG growth was performed using Halide Vapor Phase Epitaxy (HVPE), with ELOG wing of the structure formed by lateral overgrowth over the 20 μm-wide SiO2 stripes, while growth in between the stripes proceeded initially by vertical growth in the 5-μm-wide windows. TEM analysis showed that the material in the windows comprised 120o rotational nanodomains typical of κ-Ga2O3, while, in the wing regions, the material was single-domain monocrystalline. The films were conducting, with the net donor density close to 1013 cm−3. The data suggested the material in the windows have much higher resistance than in the wings. MCL spectra and imaging revealed much higher density of nonradiative recombination centers in the windows than in the wings.
Younghyun You et al 2023 ECS J. Solid State Sci. Technol. 12 075009
WS2 is an emerging semiconductor with potential applications in next-generation device architecture owing to its excellent electrical and physical properties. However, the presence of inevitable surface contaminants and oxide layers limits the performance of WS2-based field-effect transistors (FETs); therefore, novel methods are required to restore the pristine WS2 surface. In this study, the thickness of a WS2 layer was adjusted and its surface was restored to a pristine state by fabricating a recessed-channel structure through a combination of self-limiting remote plasma oxidation and KOH solution etching processes. The reaction between the KOH solution and WOX enabled layer-by-layer thickness control as the topmost oxide layer was selectively removed during the wet-etching process. The thickness of the WS2 layer decreased linearly with the number of recess cycles, and the vertical etch rate was estimated to be approximately 0.65 nm cycle−1. Micro-Raman spectroscopy and high-resolution transmission electron microscopy revealed that the layer-by-layer etching process had a nominal effect on the crystallinity of the underlying WS2 channel. Finally, the pristine state was recovered by removing ambient molecules and oxide layers from the surface of the WS2 channel, which resulted in a high-performance FET with a current on/off ratio greater than 106. This method, which provides a facile approach to restoring the pristine surfaces of transition-metal dichalcogenide (TMDC) semiconductors with precise thickness control, has potential applications in various fields such as TMDC-based (opto)electronic and sensor devices.
Vimal Kumar et al 2023 ECS J. Solid State Sci. Technol. 12 047001
For electrical sliding contact applications, there are important criteria such as superior tribological qualities in addition to strong electrical conductivity. This calls for the development of advanced metal matrix composites based on copper. Although adding graphite to a copper matrix results in a self-lubricating feature, the composite's strength declines. Harder ceramic particles like SiC, TiC, and Al2O3 may be used to reinforce the composite to increase its strength. This study looked at the construction of a hybrid composite made of a copper metal matrix reinforced with TiC and graphite particles. The impact of TiC (5, 10, and 15 vol.%) and graphite (5 and 10 vol.%) reinforcements on the structural, physical and mechanical characteristics of copper-TiC-graphite hybrid composites that were microwave-sintered are thoroughly explored. The consistent distribution of reinforcements in the copper matrix is seen in micrographs. In comparison to traditionally sintered composites, microwave-sintered ones showed greater relative density, sintered density, and hardness.
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Li et al
We propose a continuous fabrication method for HfO2-based gate stacks on a Ge bulk p-type metal–oxide–semiconductor capacitor (pMOSCAP) with HfGeOx interfacial layer by H2 plasma treatment through in situ plasma-enhanced atomic layer deposition. The electrical characteristics showed that the proper hydrogen plasma treatment could obtain an aggressively scaled equivalent oxide thickness of approximately 0.55 nm and a relatively low gate leakage current of 8 × 10-4 A/cm2 under PMA 500C.
Kabouchi et al
The current investigation employs Monte Carlo simulations to explore the magnetic features of a Fullerene-dimer-like nanostructure (C60)2 characterized by the spin σ-1. It explores how the coupling interaction Jσ, the biquadratic parameter K, the external magnetic H and the crystal D fields influence the thermal and magnetic features of the nanostructure, particularly the blocking temperature (TB). The results also highlight the dependence of hysteresis cycles and the coercive magnetic field Hc on the values of Jσ, K, and D, with significant variations at lower temperatures. The findings indicate the distinctive magnetic behavior of the Fullerene-dimer-like nanostructure (C60)2 potentially useful in various technological applications.
M A et al
This work aims to fabricate a single-feed line Cylindrical Dielectric Resonator Antenna (CDRA) using low-temperature sintered Li3MgNbO5 microwave dielectric ceramic as a resonator, excited in HEM11ẟ mode. The ceramic synthesized using the conventional solid-state route resulted in a single-phase material exhibiting a cubic structure with an Fm-3m space group. The densely packed cylindrical disk of the ceramic was subsequently characterized for its microwave dielectric behaviour in TE01δ mode using the Hakki-Coleman method. The dielectric permittivity (εr) measures 14.4, with a loss factor (tan δ) nearly equal to 4.01×10-4 and a temperature coefficient (τf) of -50.9 ppm/°C. The antenna design was executed using the high-frequency structure simulator design software, utilizing the dielectric ceramic as the resonator, Cu strip as the feedline, and FR4 as the substrate. The maximum energy was coupled to the antenna when the resonator was placed at 11.75 mm on the substrate. The fabricated CDRA, using appropriate simulated parameters, resonated at 7.67 GHz, offering a return loss (S11) of -32.64 dB and an impedance bandwidth of 10.73%. Furthermore, the CDRA displayed a voltage standing wave ratio of 1.04, ensuring a nearby ideal impedance match and a bandwidth of 810 MHz to support high-speed data transmission.
Zhang et al
Various analytical methods were employed to elucidate the effects of filling nano-calcium-silicate or nano-silica on the electronic property, water-uptake, and thermal stability of an amine-crosslinked epoxy (EP) polymer. Molecular-mixture models consisting of a nanofiller or several calcium ions and EP crosslinked macro-molecules were used to simulate local regions of nanofiller/matrix interface or ion-infiltrated matrix, calculating their density of electron-states by first-principles method to determine whether and how the nanofillers introduce charge traps into EP matrix. Calcium cations on nanofiller surface dissociate away from coordinating with silicon-oxygen tetrahedron and infiltrate into void spaces in EP matrix, leaving a larger free volume at filler/matrix interface than in matrix. Calcium cations dissolved in EP matrix adsorbed in the low electrostatic potential region or coordinate with carbonyl groups in EP matrix and thus introduce a miniband of deep electron traps at energy levels >1eV lower than conduction band minimum of the amine-crosslinked EP polymer. Even at room temperature, thermal vibrations can break coordinate bonds between calcium cations and silicon-oxygen framework on calcium-silicate nanofiller surface and make considerable calcium ions infiltrating void spaces within EP matrix, leading to comprehensive improvements of cohesive energy, thermal stability, and charge trapping ability in the calcium-silicate/EP nanocomposite.
Al-Bujasim et al
In this study, N-doped graphene oxide-polypyrrole-silica (NGO-PPy-SiO2) composite was employed as a possible anode in Li-ion batteries. The chronoamperometric technique was employed to synthesize NGO, and within this study two samples were produced, one characterized by a high polypyrrle content (N1) and the other by a low polypyrrle content (N2). N2 has the maximum initial discharge capacity of 785 mAh/g at 0.1C, which is greater than N1's capacity of 501 mAh/g. The initial coulombic efficiency of the first cycle is around 72%, whereas the ICE of N2 is approximately 60%. N1 demonstrates outstanding cycling performance for 100 cycles at high rate (10 C) with maintain capacity as 100% and coulombic efficiency of 100%, as well as extremely stable capacity during the cycling. N2 has a maintain capacity of ≈ 79% and excellent coulombic efficiency, however the capacity during cycling is not as stable as N1.
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HuiHsuan Li et al 2024 ECS J. Solid State Sci. Technol.
We propose a continuous fabrication method for HfO2-based gate stacks on a Ge bulk p-type metal–oxide–semiconductor capacitor (pMOSCAP) with HfGeOx interfacial layer by H2 plasma treatment through in situ plasma-enhanced atomic layer deposition. The electrical characteristics showed that the proper hydrogen plasma treatment could obtain an aggressively scaled equivalent oxide thickness of approximately 0.55 nm and a relatively low gate leakage current of 8 × 10-4 A/cm2 under PMA 500C.
William Cheng-Yu Ma et al 2024 ECS J. Solid State Sci. Technol. 13 045003
This work explores the characteristics of ferroelectric thin-film transistors (FeTFTs) utilizing an asymmetric dual-gate (DG) structure in both single-gate (SG) and DG operation modes. In the transfer characteristics, DG mode exhibits a memory window (MW) of 1.075 V, smaller than SG mode's MW of 1.402 V, attributed to the back-gate bias effect causing a reduction in the device's threshold voltage. However, DG mode demonstrates superior endurance characteristics with 106 cycles compared to SG mode's 105 cycles. Additionally, the increase in erase pulse voltage (VERS) exacerbates the polycrystalline-silicon channel lattice damage of FeTFT, resulting in subthreshold swing (SS) degradation. Nevertheless, the extent of SS degradation from DG mode operation is significantly lower than that of SG mode, contributing to the superior endurance of DG mode. The elevation of program pulse voltage (VPRG) induces imprint and charge-trapping effects in the top-gate ferroelectric dielectric, leading to reduced endurance. Due to the use of SiO2 as the back-gate dielectric in FeTFT, DG mode exhibits lower impacts of charge-trapping effects from the top-gate ferroelectric dielectric layer, resulting in better endurance compared to SG mode. The asymmetric DG structure provides greater tolerance in the selection of VPRG and VERS.
Yuga Osada and Takashi Yanagishita 2024 ECS J. Solid State Sci. Technol. 13 043007
Fe substrates with a depression pattern were anodized to obtain Fe oxide films with a nanohoneycomb structure and orderly arranged cylindrical pores of uniform size. Crystalline Fe oxide films could be obtained by the heat treatment of amorphous samples obtained by the anodization of Fe substrates, but the atmosphere during heat treatment had a significant effect on the surface structure and crystallinity of the resulting samples. The heat treatment of the anodized samples in air produced a crystalline Fe oxide film consisting of Fe2O3 and Fe3O4, but the nanohoneycomb structure could not be maintained above 400 °C because the Fe substrate was oxidized during the heat treatment, and its surface structure changed significantly. On the other hand, the heat treatment of the anodized samples in N2 atmosphere yielded Fe3O4 nanohoneycombs, which retained their regular honeycomb structure after heat treatment. The evaluation of the capacitor properties of the heat-treated samples showed that the properties differed markedly owing to the effects of the surface structure and crystallinity, with the sample heat-treated at 400 °C in N2 atmosphere with the largest specific capacitance. The Fe3O4 nanohoneycombs obtained in this study are expected to be useful as electrodes for high-capacity capacitors.
Yoshihiro Irokawa et al 2024 ECS J. Solid State Sci. Technol. 13 045002
Changes in the hydrogen-induced Schottky barrier height (ΦB) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investigated using current–voltage, capacitance–voltage, impedance spectroscopy, and current–time measurements. Ambient hydrogen lowered the ΦB and reduced the resistance of the semiconductor space–charge region while only weakly affecting the ideality factor, carrier concentration, and capacitance of the semiconductor space–charge region. The changes in the ΦB were reversible; specifically, the decrease in ΦB upon hydrogen exposure occurred quickly, but the recovery was slow. The results also showed that exposure to dry air and/or the application of a reverse bias to the Schottky electrodes accelerated the reversion compared with the case without the applied bias. The former case resulted in fast reversion because of the catalytic effect of Pt. The latter case, by contrast, suggested that hydrogen was incorporated into the Pt/GaN interface oxides as positive mobile charges. Moreover, both exposure to dry air and the application of a reverse bias increased the ΦB of an as-loaded sample from 0.91 to 1.07 eV, revealing that the ΦB of Pt/GaN rectifiers was kept lower as a result of hydrogen incorporation that likely occurred during device processing and/or storage.
Alain E. Kaloyeros and Barry Arkles 2024 ECS J. Solid State Sci. Technol. 13 043001
Silicon carbide (SiCx) thin films deposition processes fall primarily into three main categories: (1) chemical vapor deposition (CVD) and its variants, including plasma enhanced CVD (PE-CVD); (2) physical vapor deposition (PVD), including various forms of sputtering; (3) alternative (non-CVD and non-PVD) methodologies. Part I of this two-part report ECS J. Solid State Sci. Technol., 12, 103001 (2023) examined recent peer-reviewed publications available in the public domain pertaining to the various CVD processes for SiCx thin films and nanostructures, as well as CVD modeling and mechanistic studies. In Part II, we continue our detailed, systematic review of the latest progress in cutting-edge SiCx thin film innovations, focusing on PVD and other non-PVD and non-CVD SiCx coating technologies. Particular attention is given to pertinent experimental details from PVD and alternative (non-CVD and non-PVD) processing methodologies as well as their influence on resulting film properties and performance.
Yajie Zou et al 2024 ECS J. Solid State Sci. Technol. 13 041001
Semiconducting carbon nanotubes (CNTs), characterized by high carrier mobility and atomic thickness, are considered ideal channel materials for building high-performance and ultimate-scale field-effect transistors for future electronics. Here, we present a data-calibrated compact model of CNT field-effect transistors (CNTFETs) that incorporates temperature effects using the virtual source approach. The proposed model also includes the self-heating effect. Temperature effect was characterized by the influence of temperature on devices, achieved through establishing a temperature-dependent semi-empirical model of carrier mobility and carrier velocity. The proposed model can be easily implemented in a simulator. We designed a two-stage operational amplifier (OPAMP) using the proposed model at 32 nm technology. Compared with other studies, the designed CNTFET-based OPAMP demonstrates lower power consumption, which is beneficial for exploring the biological applications of low-power analog circuits in portable electronic devices. Furthermore, the impact of thermal variations on the design of OPAMP, as per the proposed model, was delineated. Investigations revealed that our circuit maintains a high common mode rejection ratio, which diminishes as the temperature increases and exhibits a moderate gain value that escalates with temperature.
Chia Feng Hsu et al 2024 ECS J. Solid State Sci. Technol. 13 035004
In the study, the ITO/Cu-doped Fe2O3/ITO thin film RRAM is prepared using an RF sputtering system. The XRD pattern shows that the Cu:Fe2O3 thin film has a rhombohedral structure and does not display secondary or impurity phases for copper. Results revealed that the standard deviation and average voltage of Cu:Fe2O3 thin film are −1.98 and 0.92 V for Vset, respectively, while those for Vreset are 1.31 and 0.39 V, respectively. The resistive switching cycles and data retention test times of the Cu:Fe2O3 thin film device show that the on/off ratio is 39.4 and over 104 s. These results indicated that the Cu-doped Fe2O3 thin film can improve the performance of RRAM.
Jian-Sian Li et al 2024 ECS J. Solid State Sci. Technol. 13 035003
Vertical heterojunction NiO/β n-Ga2O/n+ Ga2O3 rectifiers with 100 μm diameter fabricated on ∼17–18 μm thick drift layers with carrier concentration 8.8 × 1015 cm−3 and employing simple dual-layer PECVD SiNx/SiO2 edge termination demonstrate breakdown voltages (VB) up to 13.5 kV, on-voltage (VON) of ∼2.2 V and on-state resistance RON of 11.1–12 mΩ.cm2. Without edge termination, the maximum VB was 7.9 kV. The average critical breakdown field in heterojunctions was ∼7.4–9.4 MV. cm−1, within the reported theoretical value range from 8–15 MV.cm−1 for β-Ga2O3. For large area (1 mm diameter) heterojunction deives, the maximum VB was 7.2 kV with optimized edge termination and 3.9 kV without edge termination. The associated maximum power figure-of-merit, VB2/RON is 15.2 GW·cm−2 for small area devices and 0.65 GW.cm−2 for large area devices. By sharp contrast, small area Schottky rectifiers concurrently fabricated on the same drift layers had maximum VB of 3.6 kV with edge termination and 2.7 kV without edge termination, but lower VON of 0.71–0.75 V. The average critical breakdown field in these devices was in the range 1.9–2.7 MV. cm−1, showing the importance of both the heterojunction and edge termination. Transmission electron microscopy showed an absence of lattice damage between the PECVD and sputtered films within the device and the underlying epitaxial Ga2O3. The key advances are thicker, lower doped drift layers and optimization of edge termination design and deposition processes.
Koji Kobayashi et al 2024 ECS J. Solid State Sci. Technol. 13 033004
Technology computer-aided design (TCAD) kinetic Monte Carlo simulations revealed the unique recrystallization processes of discrete amorphous regions connected to a buried amorphous layer in a C3H5-molecular-ion-implanted silicon (Si) substrate. The faithful simulation models show that the discrete amorphous regions are first recrystallized two-dimensionally in the lateral direction from both sides and separated from the buried amorphous layer. Then, the separated discrete amorphous regions are recrystallized three-dimensionally in the lateral and vertical directions from both sides and the bottom. We found that the first two-dimensional recrystallization of discrete amorphous regions is caused by the retardation of solid-phase epitaxial growth at the Si substrate surface and near the buried amorphous layer. We also found that the large (small) discrete amorphous regions require a long (short) two-dimensional recrystallization before separating from the buried amorphous layer. The transition point in the recrystallization dimension can be determined from the lateral recrystallization length and the equivalent radius of discrete amorphous regions.
Liqun Zhao et al 2024 ECS J. Solid State Sci. Technol. 13 021004
Electromagnetic wave (EMW) absorbers and electromagnetic shielding materials have attracted much attention in recent years. In this paper, Ni/wood-based porous carbon (WPC) composite material was prepared via morphology genetic method by using nickel chloride and poplar as raw material, The experimental results show that the microwave absorbing properties of the materials are related to the pyrolysis temperature, when the pyrolysis temperature settle at 700 °C, the minimum reflection loss of WPC-Ni can reach-60.4 dB with the thickness of 2.93 mm. Moreover, the effective absorption bandwidth has been greatly broadened up to 7.3 GHz when the thickness is 2.63 mm. The reason for such excellent wave absorbing performance is that the introduction of magnetic particles Ni and WPC-Ni regular straight channels improve impedance matching, the heterogeneous interface of Ni/ wood increases the polarization loss of electromagnetic waves. It is believed that this work can provide a new idea for the preparation of low-cost and high-efficiency broadband microwave absorber.
Highlights
A simple and easy method to prepare Ni/ wood composite hierarchically porous structure materials.
The minimum reflection loss value reaches −60.4 dB with the thickness of 2.93 mm, and the effective absorption bandwidth is 7.3 GHz when the thickness is 2.63 mm.
A unique three-dimensional pore structure combined with the waveguide theory, the electromagnetic wave can reflect the loss many times in the channel, which improves the microwave absorbing performance of the material.